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SINGLE-MODE INGAASP/INP BURIED WAVEGUIDE STRUCTURES GROWN ON CHANNELLED (111)B INP SUBSTRATESBENSON TM; SYRBU AV; CHAND N et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 812-813; BIBL. 3 REF.Article

PHOTOELASTIC OPTICAL DIRECTIONAL COUPLERS IN EPITAXIAL GAAS LAYERSBENSON TM; MUROTANI T; HOUSTON PA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 237-238; BIBL. 4 REF.Article

A NOVEL ELECTRO-OPTICALLY CONTROLLED DIRECTIONAL-COUPLER SWITCH IN GAAS EPITAXIAL LAYERS AT 1.15 MU MBENSON TM; MUROTANI T; ROBSON PN et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1477-1483; BIBL. 22 REF.Article

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